HAT2168H Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
500
10 µs
100
10
1
DC
Operation
O_inpe^P_ra^W_tio=_n¹_1T^m_0c ^s_{=m21s500°C}^µs
this area is
0.1 ^{limited by RDS(on)}
Ta = 25°C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
50
10 V
3.2 V
40
4.5 V
3.0 V
30
2.8 V
20
2.6 V
10
V_GS = 2.4 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
V _DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
-25°C
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
Rev.6.00, Jun.02.2003, page 4 of 10