HAT2168H Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
150
I D = 20 A
100
10 A
50
5A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10 ^{VGS = 4.5 V}
5 _{10 V}
2
1
1 0.3 10 3 100 30 1000
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 20 A
12
V _GS = 4.5 V
8
4 _{10 V}
10 A, 5A
5 A, 10 A, 20 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = -25°C
10
25°C
3
75°C
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
Rev.6.00, Jun.02.2003, page 5 of 10