HAT1047R Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.1 ^0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θ _{ch - f(t) =} γ _{s (t) x} θ _{ch - f}
θ _{ch - f = 83.3°C/W, Ta = 25°C}
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 1000
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
-10 V
VDD
= -10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
Rev.5.00, Aug.27.2003, page 8 of 9