HAT1047R Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current HAT1047R
HAT1047RJ
Avalanche energy HAT1047R
HAT1047RJ
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
–30
±20
–14
–112
–14
—
–14
—
19.6
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Unit
V
V
A
A
A
—
A
—
mJ
W
°C
°C
Rev.5.00, Aug.27.2003, page 2 of 9