HAT1047R Datasheet, PDF (4/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test condition.
When using the glass epoxy board.
3.0 ^{(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)}
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
-500
-100
-10
-1
-0.1
10 µs
Otlihmpisietearadretiboa^D_yn^C_isR^Oin^p_D^e_S^ra_(o^tio_n^Pn₎^W(P=W11_≤^0m₁^Nm10o^s0s_ts0e)^µ₁^s
Ta = 25°C
-0.01 ^{1 shot Pulse}
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V_DS (V)
Note 1:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
-50
-10 V
-8 V
-40
Pulse Test
-4 V
-30
-20
-3 V
-10
V_GS = -2 V
0
-2
-4
-6
-8 -10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
-50
V _DS = -10 V
Pulse Test
-40
-30
-20
75°C
-10
25°C
Tc = -25°C
0
-1
-2
-3
-4
-5
Gate to Source Voltage V_GS (V)
Rev.5.00, Aug.27.2003, page 4 of 9