HAT1047R Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Body-Drain Diode Reverse
Recovery Time
500
200
100
50
20
di / dt = 100 A / µs
10
-1 -2
V_GS = 0, Ta = 25°C
-5 -10 -20 -50 -100
Reverse Drain Current I _DR (A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
1000
Coss
Crss
100
0
-10 -20 -30 -40 -50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
VDD = - 5 V
-10 V
-10
-25 V _-4
-20
V_DS
V_DD = - 5 V
-10 V
-30
-25 V
-8
V_GS
-12
-40
I _D = -14 A
-500
16 32 48 64
Gate Charge Qg (nc)
-16
-20
80
1000
500
200
100
50
20
10
Switching Characteristics
V_GS = -10 V, V_DD = -10 V
PW = 5 µs, duty < 1 %
t _d(off) ^{t r}
tf
t _d(on)
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20
Drain Current I _D (A)
Rev.5.00, Aug.27.2003, page 6 of 9