HAT1047R Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-200
I D = -10 A
Pulse Test
-160
-120
-5 A
-80
-40
-2 A
0
-4 -8 -12 -16 -20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
-4.5 V
10
V_GS = -10 V
5
2
1.0
-1 -2
-5 -10 -20 -50 -100 -200
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
32
-10 A
24 _{V GS = -4.5 V}
16
I D = -2,-5 A
8
-10 V
-2, -5, -10 A
0
-40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V _DS = -10 V
200 Pulse Test
100
50
Tc = –25°C
20
10
5
2
1.0
0.5
0.1
25°C
75°C
1.0
10
100
Drain Current I _D (A)
Rev.5.00, Aug.27.2003, page 5 of 9