HAT1047R Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Reverse Drain Current vs.
Source to Drain Voltage
-50
-10 V
-40
-5V
-30
V_GS = 0, 5 V
-20
-10
Pulse Test
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V_SDF (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I _AP = -14 A
16
V _DD = -15 V
duty < 0.1 %
Rg > 50 Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
-15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
IAP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
L
•I
2
AP
•
V_DSS
V_DSS - V_DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Rev.5.00, Aug.27.2003, page 7 of 9