HAT1047R Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1047R, HAT1047RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS –30
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I_GSS
—
Zero gate voltage drain current I_DSS
—
Zero gate voltage HAT1047R I_DSS
—
drain current
HAT1047RJ I_DSS
—
Gate to source cutoff voltage
V_GS(off) –1.0
Static drain to source on state
R_DS(on) —
resistance
R_DS(on) —
Forward transfer admittance
|y_fs|
9.6
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd —
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t_rr
—
Notes: 4. Pulse test
Typ Max Unit
—
—
V
—
—
mV
—
±10 µA
—
±1
µA
—
—
µA
—
–20 µA
—
–2.5 V
10
12
mΩ
19
25
mΩ
16
—
S
3500 —
pF
750 —
pF
520 —
pF
64
—
nc
10
—
nc
12
—
nc
23
—
ns
45
—
ns
80
—
ns
25
—
ns
–0.82 –1.07 V
45
—
ns
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ± 16V, V_DS = 0
V_DS = –30 V, V_GS = 0
V_DS = –24 V, V_GS = 0
Ta = 125°C
V_DS = –10 V, I_D = –1 mA
I_D = –7 A, V_GS = –10 V ^Note4
I_D = –7 A, V_GS = –4.5 V ^Note4
I_D = –7 A, V_DS = –10 V ^Note4
V_DS = –10 V
V_GS = 0
f = 1 MHz
V_DD = –10 V
V_GS = –10 V
I_D = –14 A
V_GS = –10 V, I_D = –7A
V_DD ≅ –10 V
R_L = 1.43 Ω
R_L = 4.7 Ω
IF = –14 A, V_GS = 0 ^Note4
IF = –14 A, V_GS = 0
diF/ dt = 100 A/µs
Rev.5.00, Aug.27.2003, page 3 of 9