RJH65T14DPQ-A0_15 Datasheet, PDF (7/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
D=1
1
0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θ_j – c(t) = γs (t) • θ_j – c
θ_j – c = 0.60°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
D=1
1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θ_j – c(t) = γs (t) • θ_j – c
θ_j – c = 1.33°C/W, Tc = 25°C
P_DM
D=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
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