RJH65T14DPQ-A0_15 Datasheet, PDF (1/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
650V - 50A - IGBT
Application: Induction Heating
Microwave Oven
Features
 Optimized for current resonance application
 Low collector to emitter saturation voltage
V_CE(sat) = 1.45 V typ. (at I_C = 50 A, V_GE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
Data Sheet
R07DS1256EJ0100
Rev.1.00
Mar 16, 2015
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
(Tc = 25°C)
Item
Symbol
Ratings
Unit
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode Tc = 25 °C
Forward current
Tc = 100 °C
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
VCES
VGES
IC ^Note1
IC ^Note1
iC(peak) ^Note1
IDF
IDF
iDF(peak) ^Note2
PC
j-c ^Note3
j-cd ^Note3
Tj ^Note4
650
30
100
50
180
40
20
100
250
0.6
1.33
175
V
V
A
A
A
A
A
A
W
°C/W
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse width limited by safe operating area.
2. PW  5 s, duty cycle  1%
3. Value at Tc = 25C
4. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
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