RJH65T14DPQ-A0_15 Datasheet, PDF (2/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES

Gate to emitter leak current
IGES

Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)

Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Turn-on delay time
td(on)

Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Turn-on loss energy
Eon
—
Turn-off loss energy
Eoff
—
Total switching energy
Etotal
—
Turn-on delay time
td(on)

Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Turn-on loss energy
Eon
—
Turn-off loss energy
Eoff
—
Total switching energy
Etotal
—
Tail loss
Etail
—
Typ



1.45
1750
69
34
80
15
35
38
30
125
115
1.3
1.2
2.5
38
30
130
135
1.45
1.45
2.90
560
Max
100
±1
7
1.75
—
—
—
—
—
—

—
—
—
—
—
—

—
—
—
—
—
—
—
Unit
A
A
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
J
(Ta = 25°C)
Test Conditions
VCE = 650 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 50 A, VGE = 15V ^Note5
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 50 A
VCC = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 
TC = 25 °C
Inductive load
VCC = 400 V
VGE = 15 V
IC = 50 A
Rg = 10 
TC = 150 °C
Inductive load
VCC = 300 V, VGE = 20 V
IC = 50 A, Rg = 15 
Tc = 125C
Current resonance circuit
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 5. Pulse test
VECF

1.2
1.6
V IF = 20 A ^Note5
trr

250

ns IF = 20 A
diF/dt = 300 A/s
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
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