RJH65T14DPQ-A0_15 Datasheet, PDF (6/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
V_GE = 0 V Tc = 25°C
f = 1 MHz
Cies
100
Coes
10
Cres
1
0 50 100 150 200 250 300
Collector to Emitter Voltage V_CE (V)
1000
800
Reverse Recovery Time vs.
Forward Current (Typical)
V_CC = 300 V
di_F/dt = 300 A/us
600
Tc = 150°C
400
25°C
200
0
0
20 40 60 80 100
Forward Current I_F (A)
Dynamic Input Characteristics (Typical)
800
16
V_GE
V_CC = 480 V
600
300 V
12
V_CE
120 V
400
8
200
0
0
V_CC = 480 V
300 V
120 V
20 40 60
4
I_C = 50 A
Ta = 25°C
0
80 100
Gate Charge Qg (nC)
Forward Current vs. Forward Voltage (Typical)
100
Tc = 25°C
80
150°C
60
40
20
V_CE = 0 V
Pulse Test
0
0
1
2
3
4
C-E Diode Forward Voltage V_CEF (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
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