RJH65T14DPQ-A0_15 Datasheet, PDF (4/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
4
I_C = 100 A
50 A
3
25 A
2
1
0
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
I_C = 10 mA
6
4
1.0 mA
2
V_CE = 10 V
Pulse Test
0
−25 0 25 50
75 100 125 150
Case Temparature Tc (°C)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Tc = 150°C
4
I_C = 100 A ^{Pulse Test}
50 A
25 A
3
2
1
0
4
8
12
16
20
Gate to Emitter Voltage V_GE (V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
3.0
V_GE = 15 V
2.5 ^{Pulse Test}
I_C = 100 A
2.0
50 A
1.5
25 A
1.0
0.5
0
−25 0 25 50 75 100 125 150
Case Temparature Tc (°C)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
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