RJH65T14DPQ-A0_15 Datasheet, PDF (5/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
Switching Characteristics (Typical) (1)
1000
tf
100
td(off)
td(on)
tr
10
V_CC = 400 V, V_GE = 15 V
Rg = 10 Ω, Tc = 150°C
1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 50 A, Tc = 150°C
tf
100
td(off)
td(on)
tr
10
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
V_CC = 400 V, V_GE = 15 V
I_C = 50 A, Rg = 10 Ω
td(off)
100 _tf
td(on)
tr
10
1
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Switching Characteristics (Typical) (2)
10
V_CC = 400 V, V_GE = 15 V
Rg = 10 Ω, Tc = 150°C
1
Eoff
Eon
0.1
10
100
Collector Current I_C (A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
V_CC = 400 V, V_GE = 15 V
I_C = 50 A, Tc = 150°C
Eon
Eoff
1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
V_CC = 400 V, V_GE = 15 V
I_C = 50 A, Rg = 10 Ω
Eon
Eoff
1
25 50 75 100 125 150
Case Temperature Tc (°C)
(Inductive load)
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