RJH65T14DPQ-A0_15 Datasheet, PDF (3/10 Pages) Renesas Technology Corp – 650V - 50A - IGBT

RJH65T14DPQ-A0
Main Characteristics
Collector Dissipation vs.
Case Temperature
300
100
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100
PW _{= 10 μs}
10
1
0.1
Tc = 25°C
Single pulse
0.01
1
10
100
1000
Collector to Emitter Voltage V_CE (V)
Typical Output Characteristics
120
Pulse T2est
Tc = 25°C
10V
90
15 V
9.0V
60
8.0V
30
V_GE = 7.0 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
R07DS1256EJ0100 Rev.1.00
Mar 16, 2015
Maximum DC Collector Current vs.
Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature Tc (°C)
Typical Transfer Characteristics
120
V_CE = 10 V
Pulse Test
90
60
150°C
Tc = 25°C
30
0
0
2
4
6
8
10
Gate to Emitter Voltage V_GE (V)
Typical Output Characteristics
120
Pulse T2est
Tc = 150°C
10V
9.0V
90
15 V
60
8.0V
30
V_GE = 7.0 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V_CE (V)
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