M16C65_15 Datasheet, PDF (66/115 Pages) Renesas Technology Corp – RENESAS MCU

M16C/65 Group
5. Electrical Characteristics
V_CC1 = V_CC2 = 5 V
Table 5.22 Electrical Characteristics (4)
R5F3651ENFC, R5F3651EDFC, R5F3651KNFC, R5F3650KNFA, R5F3650KNFB, R5F3651KDFC, R5F3650KDFB,
R5F3650KDFA, R5F3651MNFC, R5F3650MNFA, R5F3650MNFB, R5F3651MDFC, R5F3650MDFA,
R5F3650MDFB, R5F3651NNFC, R5F3650NNFA, R5F3650NNFB, R5F3651NDFC, R5F3650NDFA, R5F3650NDFB
V_CC1 = V_CC2 = 4.2 to 5.5 V, V_SS = 0 V at T_opr = −20°C to 85°C/−40°C to 85°C, f_(BCLK) = 32 MHz unless otherwise specified.
Symbol
Parameter
Measuring Condition
R_fXCIN Feedback resistance
XCIN
I_CC
Power supply current High-speed mode f_(BCLK) = 32 MHz
In single-chip, mode,
the output pin are
open and other pins
are V_SS
XIN = 4 MHz (square wave), PLL multiplied by 8
125 kHz on-chip oscillator stopped
f_(BCLK) = 32 MHz, A/D conversion
XIN = 4 MHz (square wave), PLL multiplied by 8
125 kHz on-chip oscillator stopped
f_(BCLK) = 20 MHz
XIN = 20 MHz (square wave)
125 kHz on-chip oscillator stopped
40 MHz on-chip
Main clock stopped
oscillator mode
40 MHz on-chip oscillator on,
divide-by-4 (f(BCLK) = 10 MHz)
125 kHz on-chip oscillator stopped
125 kHz on-chip Main clock stopped
oscillator mode
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator on, no division
FMR22 = 1 (slow read mode)
Low-power mode f_(BCLK) = 32 kHz
In low-power mode
FMR22 = FMR23 = 1
on flash memory ⁽¹⁾
f_(BCLK) = 32 kHz
In low-power mode
on RAM ⁽¹⁾
Wait mode
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator on
Peripheral clock operating
T_opr = 25°C
f_(BCLK) = 32 kHz (oscillation capacity High)
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator stopped
Peripheral clock operating
T_opr = 25°C
f_(BCLK) = 32 kHz (oscillation capacity low)
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator stopped
Peripheral clock operating
Stop mode
T_opr = 25°C
Main clock stopped
40 MHz on-chip oscillator stopped
125 kHz on-chip oscillator stopped
Peripheral clock stopped
Note:
1.
T_opr = 25°C
During flash memory f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
program
V_CC1 = 5.0 V
During flash memory f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
erase
V_CC1 = 5.0 V
This indicates the memory in which the program to be executed exists.
Standard
Min. Typ. Max.
Unit
8
MΩ
26.0
mA
27.0
mA
17.0
mA
18.0
mA
550.0
μA
170.0
μA
45.0
μA
20.5
μA
11.0
μA
6.0
μA
1.7
μA
20.0
mA
30.0
mA
R01DS0031EJ0210 Rev.2.10
Jul 31, 2012
Page 66 of 111