HN58V256A Datasheet, PDF (6/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

HN58V256A Series, HN58V257A Series
AC Characteristics (Ta = 0 to +70°C, V_CC = 2.7 to 5.5 V)
Test Conditions
• Input pulse levels: 0.4 V to 2.4 V (V_CC ≤ 3.6V), 0.4V to 3.0 V (V_CC > 3.6 V), 0 V to V_CC (RES pin*²)
• Input rise and fall time: ≤ 5 ns
• Input timing reference levels: 0.8, 1.8 V
• Output load: 1TTL Gate +100 pF
• Output reference levels: 1.5 V, 1.5 V
Read Cycle
HN58V256A/HN58V257A
-12
Parameter
Symbol Min
Max
Unit
Address to output delay
t_ACC

CE to output delay
t_CE

OE to output delay
t_OE
10
Address to output hold
t_OH
0
OE (CE) high to output float*¹ t_DF
0
RES low to output float*^{1, 2}
t_DFR
0
RES to output delay*²
t_RR
0
120
ns
120
ns
60
ns

ns
40
ns
350
ns
600
ns
Test conditions
CE = OE = V_IL, WE = V_IH
OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
CE = OE = V_IL, WE = V_IH
Rev.5.00, Nov. 17.2003, page 6 of 22