HN58V256A Datasheet, PDF (1/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

HN58V256A Series
HN58V257A Series
256k EEPROM (32-kword × 8-bit)
Ready/Busy and RES function (HN58V257A)
REJ03C0147-0500Z
(Previous ADE-203-357D (Z) Rev.4.0)
Rev. 5.00
Nov. 17. 2003
Description
Renesas Technology's HN58V256A and HN58V257A are electrically erasable and programmable ROMs
organized as 32768-word × 8-bit. They have realized high speed, low power consumption and high reliability
by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also
have a 64-byte page programming function to make their write operations faster.
Features
• Single 3 V supply: 2.7 to 5.5 V
• Access time: 120 ns max
• Power dissipation:
 Active: 20 mW/MHz, (typ)
 Standby: 110 µW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms max
• Automatic page write (64 bytes): 10 ms max
• Ready/Busy (only the HN58V257A series)
• Data polling and Toggle bit
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MNOS cell technology
• 10⁵ erase/write cycles (in page mode)
• 10 years data retention
• Software data protection
• Write protection by RES pin (only the HN58V257A series)
• Industrial versions (Temperature range: −20 to 85°C and −40 to 85°C) are also available.
• There are free also lead free products.
Rev.5.00, Nov. 17.2003, page 1 of 22