HN58V256A Datasheet, PDF (4/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

HN58V256A Series, HN58V257A Series
Operation Table
Operation
CE
OE
WE
RES*³
Read
Standby
V_IL
V_IL
V_IH
V_H*¹
V_IH
×*²
×
×
Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write inhibit
×
×
V_IH
×
×
V_IL
×
×
Data polling
V_IL
V_IL
V_IH
V_H
Program reset
×
×
×
V_IL
Notes: 1. Refer to the recommended DC operating condition.
2. ×: Don’t care
3. This function is supported by only the HN58V267A series.
RDY/Busy*³
High-Z
High-Z
High-Z to V_OL
High-Z


V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z


Data out (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*²
V_CC
Vin
Topr
−0.6 to +7.0
−0.5*¹ to +7.0*³
0 to +70
Storage temperature range
Tstg
−55 to +125
Notes: 1. Vin min = −3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
3. Should not exceed V_CC + 1.0 V.
Unit
V
V
°C
°C
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Supply voltage
Input voltage
Operating temperature
V_CC
V_SS
V_IL
V_IH
V_H*⁴
Topr
2.7
3.0
0
0
−0.3*¹

1.9*²

V_CC −0.5 
0

Notes: 1. V_IL min: −1.0 V for pulse width ≤ 50 ns.
2. V_IH min for V_CC = 3.6 to 5.5 V is 2.4 V.
3. V_IH max: V_CC + 1.0 V for pulse width ≤ 50 ns.
4. This function is supported by only the HN58V257A series.
Max
Unit
5.5
V
0
V
0.6
V
V_CC + 0.3*³ V
V_CC + 1.0 V
+70
°C
Rev.5.00, Nov. 17.2003, page 4 of 22