HN58V256A Datasheet, PDF (23/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

Revision History
HN58V256A/HN58V257A Series Data Sheet
Rev. Date
0.0 Mar. 15. 1995
0.1 Aug. 7. 1995
1.0 Apr. 12. 1995
Contents of Modification
Page Description
 Initial issue
 Determination of package type:

HN58V256AT series (TFP-28DB)
 Deletion of HN58V256AP series (DP-28)
 Deletion of HN58V256AFPI-12/15
 Deletion of HN58V256AT-12SR/15SR
 Deletion of HN58V257AT-12SR/15SR
4
Absolute Maximum Rating
Deletion of Device Group
Deletion of Operating temperature range
− 20 to + 85°C and − 40 to +85°C
4
Recommended DC Operating Conditions
Deletion of Device Group
Deletion of Operating temperature range
−20//85°C and −40//85°C
Deletion of note 4
Change order of notes
 Change of format
2
Operating Information
Deletion of HN58V256A-15 and HN58V257A-15
Deletion of note 1
Deletion of Compatible type No.
Deletion of Operating temperature range
3
Pin Description
Addition of note 1
3
Block Diagram
Addition of note 1
 Mode Selection
Addition of note 3
4
Absolute Maximum Ratings
Addition of note 4
4
Recommended DC operating Condition
V_IH (min) 2.4 V to 1.9 V
Addition of note 4
5
DC Characteristics
I_CC3 (max): 8/12/20/30 mA to 8/12/15/30 mA
6
AC Characteristics
Test condition: Input pulse levels: 0 V to 3.0 V to
0.4 V to 2.4 V(V_CC ≤ 3.6 V), 0.4 V to 3.0 V(V_CC > 3.6V)
Addition of note 2
Read Timing Waveform: Addition of note 1
Write Cycle: t_DS (min): 50 ns to 70 ns
Addition of note 4, 5
Byte Write Timing Waveform (1) and (2): Addition of note 1
Page Write Timing Waveform (1) and (2): Addition of note 2