HN58V256A Datasheet, PDF (5/25 Pages) Hitachi Semiconductor – 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58V257A)

HN58V256A Series, HN58V257A Series
DC Characteristics (Ta = 0 to +70°C, V_CC = 2.7 to 5.5 V)
Parameter
Input leakage current
Output leakage current
Standby V_CC current
Operating V_CC current
Symbol Min
I_LI

I_LO

I_CC1

I_CC2

I_CC3

Typ
Max

2*¹

2

20

1

8


12


12


30
Output low voltage
V_OL


0.4
Output high voltage
V_OH
V_CC × 0.8 

Note: 1. I_LI on RES = 100 µA max (only the HN58V257A series)
Unit
µA
µA
µA
mA
mA
mA
mA
mA
V
V
Test conditions
V_CC = 5.5 V, Vin = 5.5 V
V_CC = 5.5 V, Vout = 5.5/0.4 V
CE = V_CC
CE = V_IH
Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 1 ns, V_CC = 5.5 V
Iout = 0 mA, Duty = 100%,
Cycle = 120 µs, V_CC = 3.6 V
Iout = 0 mA, Duty = 100%,
Cycle = 120 ns, V_CC = 5.5 V
I_OL = 2.1 mA
I_OH = −400 µA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Input capacitance*¹
Cin


6
Output capacitance*¹
Cout


12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit Test conditions
pF Vin = 0 V
pF Vout = 0 V
Rev.5.00, Nov. 17.2003, page 5 of 22