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PD44164095B_15 Datasheet, PDF (16/35 Pages) Renesas Technology Corp – 18M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION | |||
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μPD44164095B, μPD44164185B
AC Characteristics (TA = 0 to 70°C or TA = â40 to 85°C, VDD = 1.8 ± 0.1 V)
AC Test Conditions (VDD = 1.8 ± 0.1 V, VDDQ = 1.4 V to VDD)
Input waveform (Rise / Fall time ⤠0.3 ns)
1.25 V
0.25 V
Output waveform
0.75 V
Test Points
VDDQ / 2
Test Points
0.75 V
VDDQ / 2
Output load condition
Figure 1. External load at test
VDDQ / 2
0.75 V
VREF
SRAM
250 Ω
ZQ
ZO = 50 Ω
50 Ω
R10DS0016EJ0200 Rev.2.00
October 6, 2011
Page 16 of 34
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