HYB25L256160AC Datasheet, PDF (8/18 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

HY[B/E]25L256160A[F/C]–7.5
256MBit Mobile-RAM
Functional Description
3
Functional Description
MR
Mode Register Definition
(BA[1:0] = 00_B)
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0
0
MODE
CL
BT
BL
reg. addr
w
w
w
w
Field Bits Type Description
BL [2:0] w
Burst Length
Number of sequential bits per DQ related to one read/write command.
Note: All other bit combinations are RESERVED.
BT 3
w
CL [6:4] w
000 1
001 2
010 4
011 8
111 full page (sequential burst type only)
Burst Type
See Table 5 for internal address sequence of low order address bits.
0 Sequential
1 Interleaved
CAS Latency
Note: All other bit combinations are RESERVED.
MODE [12:7] w
010 2
011 3
Operating Mode
Note: All other bit combinations are RESERVED.
000000 Burst Read/Burst Write
000100 Burst Read/Single Write
Internet Data Sheet
8
Rev. 1.41, 2006-12
04292004-EQNL-FLNW