HYB25L256160AC Datasheet, PDF (10/18 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

HY[B/E]25L256160A[F/C]–7.5
256MBit Mobile-RAM
Functional Description
EMR
Extended Mode Register Definition
(BA[1:0] = 10_B)
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
1
0
reg. addr
MODE
w
TCSR
w
PASR
w
Field
Bits
Type Description¹⁾
PASR
[2:0]
w
TCSR
[4:3]
w
Partial Array Self Refresh
000 banks to be self refreshed: all 4 of 4
001 banks to be self refreshed: 2 of 4, BA[1:0] = 00_B or 01_B
010 banks to be self refreshed: 1 of 4, BA[1:0] = 00_B
101 banks to be self refreshed: 0.5 of 4, BA[1:0] = 00_B & RA12 = 0_B
110 banks to be self refreshed: 0.25 of 4, BA[1:0] = 00_B & RA[12:11] = 00_B
Temperature Compensated Self Refresh
00 on-chip temperature sensor enabled
01 Maximum case temperature: 45°C, on-chip temperature sensor disabled
10 Maximum case temperature: 15°C, on-chip temperature sensor disabled
11 Maximum case temperature: 85°C, on-chip temperature sensor disabled
MODE [12:5] w
Operating Mode
00h Normal operation
1) All other bit combinations are RESERVED.
Internet Data Sheet
10
Rev. 1.41, 2006-12
04292004-EQNL-FLNW