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HYB25L256160AC Datasheet, PDF (14/18 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM
HY[B/E]25L256160A[F/C]–7.5
256MBit Mobile-RAM
Electrical Characteristics
4.3
Current Specification
Table 10 IDD Specification and Conditions1)2)
Parameter
Symbol
–7.5
Unit Note/ Test Condition
Operating current
Single bank access cycles
typ. max.
IDD1
—
65
mA tRC = tRC,MIN 3)
Precharge standby current
Power down mode
IDD2P
—
0.6
Precharge standby current
Non power down mode
IDD2N
—
20
Non operating current
Active state of 1 upto 4 banks, power down
IDD3P
—
3.5
Non operating current
IDD3N
—
25
Active state of 1 upto 4 banks, non power down
Burst operating current
Read command cycling
IDD4
—
80
mA CS = VIH,MIN,
CKE ≤ VIL,MAX 3)
mA CS = VIH,MIN,
CKE ≥ VIH,MIN 3)
mA CS = VIH,MIN,
CKE ≤ VIL,MAX 3)
mA CS = VIH,MIN,
CKE ≥ VIH,MIN 3)
mA 3)4)
Auto refresh current
Auto refresh command cycling
IDD5
—
155
mA tRC = tRC,MIN
Self refresh current
IDD6
see Table 11 µA tCK =infinity,
CKE = 0.2 V
Deep power down mode current
IDD7
—
5
µA
1) 0 °C ≤ TC ≤ 70 °C (comm.) and –25 °C ≤ TCASE ≤ +85 °C; recommended operating conditions unless otherwise noted
2) For proper power-up see the operation section of this data sheet.
3) These parameters depend on the frequency. These values are measured at 133MHz for –7.5 and at 100MHz for –8 parts.
Input signals are changed once during tCK. If the devices are operating at a frequency less than the maximum operation
frequency, these current values are reduced.
4) These parameters are measured with continuous data stream during read access and all DQs toggling. CL = 3 and BL = 4
is used and the VDDQ current is excluded.
Internet Data Sheet
14
Rev. 1.41, 2006-12
04292004-EQNL-FLNW