HYB25L256160AC Datasheet, PDF (15/18 Pages) Infineon Technologies AG – 256-Mbit Mobile-RAM

HY[B/E]25L256160A[F/C]–7.5
256MBit Mobile-RAM
Electrical Characteristics
Table 11 I_DD6 Programmable Self Refresh Current¹⁾²⁾
Parameter
Symbol –8
max.
Unit T_CASE
TCSR³⁾
Self refresh current
I_DD6
Self refresh mode,
full array activations = all banks
t.b.d.
250
475
µA max. 15°C
µA max. 45°C
µA max. 70°C
725
µA max. 85°C
Self refresh current
I_DD6
Self refresh mode,
half array activations = bank 0 + 1
t.b.d.
150
250
µA max. 15°C
µA max. 45°C
µA max. 70°C
450
µA max. 85°C
Self refresh current
I_DD6
Self refresh mode,
quarter array activations = bank 0
t.b.d.
100
150
µA max. 15°C
µA max. 45°C
µA max. 70°C
275
µA max. 85°C
1) Recommended operating conditions unless otherwise noted.
2) For proper power-up see the operation section of this data sheet.
3) Extended Mode Register A4-A3.
4) Target values to be verified on final product and may change.
Note/ Test Condition
t_CK =infinity,
CKE = 0.2 V ⁴⁾
t_CK =infinity,
CKE = 0.2 V ⁴⁾
t_CK =infinity,
CKE = 0.2 V ⁴⁾
Internet Data Sheet
15
Rev. 1.41, 2006-12
04292004-EQNL-FLNW