HYB18L128160BF Datasheet, PDF (49/55 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Electrical CharacteristicsPull-up and Pull-down Characteristics
Table 23 Self Refresh Currents¹⁾²⁾
Parameter & Test Conditions
Max.
Symbol
Temperature
Values
Unit
typ.
max.
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
85 °C
I_DD6
400
470
µA
70 °C
285
—
45 °C
200
—
25 °C
180
—
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
85 °C
70 °C
45 °C
25 °C
340
400
250
—
185
—
170
—
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
85 °C
70 °C
45 °C
25 °C
310
360
240
—
175
—
165
—
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); V_DD = V_DDQ = 1.70V to 1.95V
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
temperature with a much finer resolution than supported by the 4 distinct temperature levels as defined by JEDEC for
TCSR. At production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained
from device characterization.
3.4
Pull-up and Pull-down Characteristics
Table 24 Half Drive Strength and Full Drive Strength
Voltage
(V)
Half Drive Strength
Pull-Down Current
(mA)
Pull-Up Current (mA)
Nominal Nominal Nominal Nominal
Low
High
Low
High
0.00 0.0
0.0
-19.7
-33.4
0.40 15.1
20.5
-18.8
-32.0
0.65 20.3
28.5
-18.2
-31.0
0.85 22.0
32.0
-17.6
-29.9
1.00 22.6
33.5
-16.7
-28.7
1.40 23.5
35.0
-9.4
-20.4
1.50 23.6
35.3
-6.6
-17.1
1.65 23.8
35.5
-1.8
-11.4
1.80 23.9
35.7
3.8
-4.8
1.95 24.0
35.9
9.8
2.5
Full Drive Strength
Pull-Down Current
(mA)
Nominal Nominal
Low
High
0.0
0.0
30.2
41.0
40.5
57.0
43.9
64.0
45.2
67.0
46.9
70.0
47.2
70.5
47.5
71.0
47.7
71.4
48.0
71.8
Pull-Up Current (mA)
Nominal
Low
-39.3
-37.6
-36.4
-35.1
-33.3
-18.8
-13.2
-3.5
7.5
19.6
Nominal
High
-66.7
-63.9
-61.9
-59.8
-57.3
-40.7
-34.1
-22.7
-9.6
5.0
The above characteristics are specified under nominal process variation / condition
Temperature (T_j): Nominal = 50 °C, V_DDQ: Nominal = 1.80 V
Data Sheet
49
Rev. 1.71, 2007-01
05282004-NZNK-8T0D