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| HYB18L128160BF Datasheet, PDF (15/55 Pages) Infineon Technologies AG – DRAMs for Mobile Applications | |||
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
# ,+
)N P U T
T #+
T #(
T #,
6A L I D
T )3 T) (
6A L I D
6A L I D
Figure 5
!
! " ! "! #3 # + % 2 ! 3 # ! 3 7 %
Address / Command Inputs Timing Parameters
$O Ng T #A R E
Table 8 Inputs Timing Parameters
Parameter
Clock cycle time
CL = 3
CL = 2
Clock frequency
CL = 3
CL = 2
Clock high-level width
Clock low-level width
Address and command input setup time
Address and command input hold time
Symbol
min.
tCK
7.5
9.5
fCK
ââ
ââ
tCH
2.5
tCL
2.5
tIS
1.5
tIH
0.5
- 7.5
max.
ââ
ââ
133
105
ââ
ââ
ââ
ââ
2.4.1 NO OPERATION (NOP)
Unit Notes
ns
ââ
ns
MHz ââ
MHz
ns
ââ
ns
ââ
ns
ââ
ns
ââ
#, +
#+ %
#3
2! 3
#! 3
7 %
!
!
(I G H
" ! " !
$O Ng T #A R E
Figure 6 No Operation Command
The NO OPERATION (NOP) command is used to perform a NOP to a Mobile-RAM which is selected (CS = LOW).
This prevents unwanted commands from being registered during idle states. Operations already in progress are
not affected.
Data Sheet
15
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
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