HYB18L128160BF Datasheet, PDF (46/55 Pages) Infineon Technologies AG – DRAMs for Mobile Applications

HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Electrical CharacteristicsAC Characteristics
Table 20 Electrical Characteristics¹⁾
Parameter
Symbol
Values
Unit Notes
min.
max.
Power Supply Voltage
V_DD
1.70
1.95
V—
Power Supply Voltage for DQ Output Buffer
Input high voltage
V_DDQ
V_IH
1.70
0.8 × V_DDQ
1.95
V_DDQ + 0.3
V—
V
2)
Input low voltage
V_IL
-0.3
0.3
V
Output high voltage (I_OH = -0.1 mA)
V_OH
V_DDQ - 0.2
—
V—
Output low voltage (I_OL = 0.1 mA)
V_OL
–
0.2
V—
Input leakage current
I_IL
-1.0
1.0
µΑ —
Output leakage current
I_OL
-1.5
1.5
µA —
1) 0 °C ≤ T_C ≤ 70 °C (comm.); -25 °C ≤ T_C ≤ 85 °C (ext.); all voltages referenced to V_SS. V_SS and V_SSQ must be at same
potential.
2) V_IH may overshoot to V_DD + 0.8 V for pulse width < 4 ns; V_IL may undershoot to -0.8 V for pulse width < 4 ns.
Pulse width measured at 50% with amplitude measured between peak voltage and DC reference level.
3.2
AC Characteristics
Table 21 AC Characteristics^1)2)3)4)
Parameter
Clock cycle time
Clock frequency
Access time from CLK
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address and command input hold time
Data (DQ) input hold time
MODE REGISTER SET command period
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
DQM write mask latency
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE bank A to ACTIVE bank B delay
ACTIVE to PRECHARGE command period
Data Sheet
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
Symbol
- 7.5
min. max.
t_CK
7.5
—
9.5
—
f_CK
—
133
—
105
t_AC
—
5.4
—
6.0
t_CH
2.5
—
t_CL
2.5
—
t_IS
1.5
—
t_IH
0.5
—
0.8
—
t_MRD
2
t_LZ
1.0
t_HZ
3.0
t_OH
2.5
t_DQZ
—
t_DQW
0
t_RC
67
t_RCD
19
t_RRD
15
t_RAS
45
—
—
7.0
—
2
—
—
—
—
100k
Unit Notes
ns —
ns
MHz —
MHz
ns
5)6)
ns
ns —
ns —
ns
7)
ns
ns
t_CK —
ns —
ns —
ns
t_CK —
t_CK —
ns
8)
ns
ns
ns
46
Rev. 1.71, 2007-01
05282004-NZNK-8T0D