 English |
|
|
|
|
|
|
|
| HYB18L128160BF Datasheet, PDF (39/55 Pages) Infineon Technologies AG – DRAMs for Mobile Applications | |||
| |||
| ◁ |
2.4.9.2 SELF REFRESH
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional DescriptionCommands
#, +
#+ %
#3
2! 3
#! 3
7 %
!
!
" ! " !
$O Ng T #A R E
Figure 43 SELF REFRESH Entry Command
The SELF REFRESH command can be used to retain data in the Mobile-RAM, even if the rest of the system is
powered down. When in the self refresh mode, the Mobile-RAM retains data without external clocking. The SELF
REFRESH command is initiated like an AUTO REFRESH command except CKE is LOW. Input signals except
CKE are âDonât Careâ during SELF REFRESH.
The procedure for exiting SELF REFRESH requires a stable clock prior to CKE returning HIGH. Once CKE is
HIGH, NOP commands must be issued for tRC because time is required for a completion of any internal refresh in
progress.
If during normal operation burst auto refresh or user controlled refresh is used, add 4096 auto refresh cycles just
before self refresh entry and just after self refresh exit.
#, +
T 20
#+ %
T 2#
T 2#
T 32 % 8
#O MM A N D 02 %
! DD R E SS
. /0
! ! 0 0 R E !L L
$1
(I GH
:
! 2&
./ 0
./ 0
./ 0
!2 &
./ 0
! #4
"A !
2O W N
2O W N
Figure 44
3E LF 2E F RE S H
3 E LF 2E F R ES H
% N T RY #O M M AN D %X IT #O MM A N D
Self Refresh Entry and Exit
%X IT F R OM
! N Y #O MM A N D
3E LF 2E F R E SH ! U T O 2E F R E SH
2E C O MM E N D E D
$ ON g T #A RE
Data Sheet
39
Rev. 1.71, 2007-01
05282004-NZNK-8T0D
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese