English
Language : 

HYS64T128020EML-3S-B Datasheet, PDF (28/39 Pages) Qimonda AG – 214-Pin Unbuffered DDR2 SDRAM MicroDIMM Modules Low Power
Preliminary Internet Data Sheet
HYS64T128020EML-[3S/3.7/5]-B
Unbuffered DDR2 SDRAM MicroDIMM Modules
Parameter
Symbol Note
1)2)3)4)5)
Self-Refresh Current
IDD6
CKE ≤ 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data
bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max.
All Bank Interleave Read Current
IDD7
6)
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control
and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.
1) VDDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V
2) IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled.
3) Definitions for IDD see Table 20
4) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P
5) For details and notes see the relevant Qimonda component data sheet
6) IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output
buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.
Parameter
LOW
STABLE
FLOATING
SWITCHING
Description
TABLE 20
Definitions for IDD
VIN ≤ VIL(ac).MAX, HIGH is defined as VIN ≥ VIH(ac).MIN
Inputs are stable at a HIGH or LOW level
Inputs are VREF = VDDQ /2
Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ
signals not including mask or strobes
Rev. 0.5, 2007-05
28
05212007-7F24-MITO