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HYB25DC512800C Datasheet, PDF (22/35 Pages) Qimonda AG – 512-Mbit Double-Data-Rate SDRAM
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Internet Data Sheet
HYB25DC512[800/160]C[E/F]
512-Mbit Double-Data-Rate SDRAM
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and
must track variations in the DC level of VREF.
6) Inputs are not recognized as valid until VREF stabilizes.
7) VID is the magnitude of the difference between the input level on CK and the input level on CK.
8) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and
voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between
pull-up and pull-down drivers due to process variation.
9) Values are shown per pin.
Rev. 1.3, 2006-12
22
03292006-W2FE-ELDX
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