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HYB18T512161B2F Datasheet, PDF (17/37 Pages) Qimonda AG – 512-Mbit x16 DDR2 SDRAM
Internet Data Sheet
HYB18T512161B2F–20/25
512-Mbit Double-Data-Rate-Two SDRAM
5
Electrical Characteristics
TABLE 15
DRAM Component Operating Temperature Range
Symbol Parameter
Rating
Unit
Notes
TCASE
Operating Temperature
0 to 95
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C case temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 μs.
4) When operating this product in the 85°C to 95°C TCASE temperature range, the High Temperature Self Refresh has to be enabled by setting
EMR(2) bit A7 to “1“. Note, when the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%
5.1
Absolute Maximum Ratings
Symbol
Parameter
Rating
TABLE 16
Absolute Maximum Ratings
Unit
Notes
min
max
VDD
Voltage on VDD pin relative to VSS
–1.0
2.3
V
1)
VDDQ
Voltage on VDDQ pin relative to VSS
–0.5
2.3
V
1)
VDDL
Voltage on VDDL pin relative to VSS
–0.5
2.3
V
1)
VIN, VOUT Voltage on any pin relative to VSS
–0.5
2.3
V
1)
TJ
Junction Temperature
125
°C
1)
TSTG
Storage Temperature
–55
150
°C
1)2)
1) Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Rev. 1.1, 2007-06
17
05152007-ZYAH-ACMZ