HYS72T512022EP Datasheet, PDF (15/36 Pages) Qimonda AG – 240-Pin Dual Die Registered DDR2 SDRAM Modules

Internet Data Sheet
HYS72T[512/1G]0x2EP–[3S/3.7]–B
Registerd DDR2 SDRAM Module
3.3
Timing Characteristics
This chapter describes the timing characteristics.
3.3.1
Speed Grade Definitions
All Speed grades faster than DDR2-400B comply with DDR2-400B timing specifications(t_CK = 5ns with t_RAS = 40ns).
Speed Grade Definitions: Table 11 for DDR2–667D, Table 12 for DDR2–533C
Speed Grade
TABLE 11
Speed Grade Definition Speed Bins for DDR2–667D
DDR2–667D
Unit
Note
QAG Sort Name
–3S
CAS-RCD-RP latencies
5–5–5
t_CK
Parameter
Symbol
Min.
Max.
—
Clock Frequency
@ CL = 3
t_CK
5
8
ns
1)2)3)4)
@ CL = 4
t_CK
3.75
8
ns
1)2)3)4)
@ CL = 5
t_CK
3
8
ns
1)2)3)4)
Row Active Time
t_RAS
45
70000
ns
1)2)3)4)5)
Row Cycle Time
t_RC
60
—
ns
1)2)3)4)
RAS-CAS-Delay
t_RCD
15
—
ns
1)2)3)4)
Row Precharge Time
t_RP
15
—
ns
1)2)3)4)
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.Timings are further guaranteed for normal
OCD drive strength (EMRS(1) A1 = 0)
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,
input reference level is the crosspoint when in differential strobe mode
3) Inputs are not recognized as valid until V_REF stabilizes. During the period before V_REF stabilizes, CKE = 0.2 x V_DDQ is recognized as low.
4) The output timing reference voltage level is V_TT.
5) t_RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x t_REFI.
Rev. 1.0, 2007-03
15
03292007-RHOW-C5L6