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HYS72T512022EP Datasheet, PDF (13/36 Pages) Qimonda AG – 240-Pin Dual Die Registered DDR2 SDRAM Modules
Internet Data Sheet
HYS72T[512/1G]0x2EP–[3S/3.7]–B
Registerd DDR2 SDRAM Module
3
Electrical Characteristics
This chapter lists the electrical characteristics.
3.1
Absolute Maximum Ratings
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 7 at any time.
Symbol
Parameter
Rating
TABLE 7
Absolute Maximum Ratings
Unit Note
Min. Max.
VDD
Voltage on VDD pin relative to VSS
–1.0 +2.3
V
1)
VDDQ
Voltage on VDDQ pin relative to VSS
–0.5 +2.3
V
1)2)
VDDL
Voltage on VDDL pin relative to VSS
–0.5 +2.3
V
1)2)
VIN, VOUT
Voltage on any pin relative to VSS
–0.5 +2.3
V
1)
TSTG
Storage Temperature
–55
+100
°C
1)2)
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
Symbol
Parameter
TABLE 8
DRAM Component Operating Temperature Range
Rating
Unit
Note
Min.
Max.
TOPER
Operating Temperature
0
95
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case
temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50 %
Rev. 1.0, 2007-03
13
03292007-RHOW-C5L6