CM2400HC-34N_11 Datasheet, PDF (7/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

CONFIDENTIAL
4^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
6000
5000
VCC ≤ 1200V, VGE = ±15V
Tj = 125°C, RG(off) ≥ 1.6 Ω
4000
3000
2000
1000
0
0
500
1000 1500 2000
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
3000
2500
VCC ≤ 1200V, di/dt ≤ 4700A/µs
Tj = 125°C
2000
1500
1000
500
0
0
500
1000 1500 2000
Collector-Emitter Voltage [V]
SHORT CIRCUIT SAFE OPERATING AREA
(SCSOA)
25000
20000
V_CC ≤ 1200V, V_GE = ±15V
R_G(on) ≥ 0.7Ω, R_G(off) ≥ 1.6Ω
Tj = 125°C, tpsc ≤ 10µs
15000
10000
5000
0
0
500
1000 1500 2000
Collector-Emitter Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C 7 of 7