CM2400HC-34N_11 Datasheet, PDF (3/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

CONFIDENTIAL
4^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol
Item
R_th(j-c)Q
R_th(j-c)R
R_th(c-f)
Thermal resistance
Thermal resistance
Contact thermal resistance
Conditions
Min
Junction to Case, IGBT part
—
Junction to Case, FWDi part
—
Case to Fin, λ_grease = 1W/m·K, D_(c-f) = 100 µm
—
Limits
Typ
—
—
8.0
Max
9.5
21.0
—
Unit
K/kW
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
M_t
M_s
M_t
m
CTI
d_a
d_S
L_{P CE}
R_{CC’+EE’}
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Conditions
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
T_c = 25 °C
Limits
Unit
Min
Typ
Max
7.0
—
20.0
N·m
3.0
—
6.0
N·m
1.0
—
3.0
N·m
—
0.8
—
kg
600
—
—
—
19.5
—
—
mm
32.0
—
—
mm
—
16
—
nH
—
0.14
—
mΩ
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Pulse width and repetition rate should be such that junction temperature (T_j) does not exceed T_opmax rating (125°C).
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T_j) should not exceed T_jmax rating (150°C).
Pulse width and repetition rate should be such as to cause negligible temperature rise.
E_on(10%) / E_off(10%) / E_rec(10%) are the integral of 0.1V_CE x 0.1I_C x dt.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C 3 of 7