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| CM2400HC-34N_11 Datasheet, PDF (1/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Prepared by
Date
S.Iura
Revision: C
I.Umezaki 5-Sep.-2011
CONFIDENTIAL
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CM2400HC-34N
COMPANY PROPRIETARY
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC
WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
âIC â¦â¦â¦â¦â¦â¦â¦â¦â¦ 2400 A
âVCES â¦â¦â¦â¦â¦â¦â¦â¦ 1700 V
âInsulated Type
â1-element in a Pack
âAlSiC Baseplate
âTrench Gate IGBT : CSTBTTM
âSoft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C 1 of 7
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