CM2400HC-34N_11 Datasheet, PDF (2/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

CONFIDENTIAL
4^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
Item
Conditions
Ratings
Unit
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_c
V_iso
T_j
T_op
T_stg
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
(Note 2)
(Note 3)
V_GE = 0V, T_j = 25 °C
V_CE = 0V, T_j = 25 °C
DC, T_c = 75 °C
Pulse ^{(Note 1)}
DC
Pulse ^{(Note 1)}
T_c = 25 °C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
1700
V
± 20
V
2400
A
4800
A
2400
A
4800
A
13100
W
4000
V
−40 ~ +150
°C
−40 ~ +125
°C
−40 ~ +125
°C
T_psc
Maximum short circuit pulse width
V_CC =1200V, V_CE ≤ V_CES, V_GE =15V, T_j =125°C
10
µs
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
Limits
Unit
Min
Typ
Max
I_CES
Collector cutoff current
V_CE = V_CES, V_GE = 0V
T_j = 25 °C
—
—
8.0
mA
T_j = 125 °C
—
6.0
16.0
V_GE(th)
Gate-emitter threshold voltage
V_CE = 10 V, I_C = 240 mA, T_j = 25 °C
6.0
7.0
8.0
V
I_GES
Gate leakage current
V_GE = V_GES, V_CE = 0V, T_j = 25°C
—
—
0.5
µA
C_ies
Input capacitance
C_oes
Output capacitance
C_res
Reverse transfer capacitance
—
352
—
nF
V_CE = 10 V, V_GE = 0 V, f = 100 kHz
—
19.2
—
nF
T_j = 25 °C
—
5.6
—
nF
Q_g
Total gate charge
V_CC = 850 V, I_C = 2400 A
V_GE = ±15V, T_j = 25 °C
—
24.5
—
µC
V_CE(sat)
Collector-emitter saturation voltage
I_C = 2400 A ^{(Note 4)}
V_GE = 15 V
T_j = 25 °C
—
T_j = 125 °C
—
2.15
2.80
2.40
—
V
t_d(on)
Turn-on delay time
V_CC = 850 V, I_C = 2400 A
—
—
1.50
µs
t_r
E_on(10%)
Turn-on rise time
Turn-on switching energy
(Note 5)
V_GE = ±15 V, R_G(on) = 0.7 Ω
T_j = 125 °C, L_s = 100 nH
Inductive load
—
—
0.70
µs
—
0.64
—
J/P
t_d(off)
t_f
E_off(10%)
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 5)
V_CC = 850 V, I_C = 2400 A
V_GE = ±15 V, R_G(off) = 1.6 Ω
T_j = 125 °C, L_s = 100 nH
Inductive load
—
—
3.00
µs
—
—
0.60
µs
—
0.84
—
J/P
V_EC
Emitter-collector voltage
(Note 2) ^IE ^{= 2400 A (Note 4)}
T_j = 25 °C
—
2.60
3.30
V
V_GE = 0 V
T_j = 125 °C
—
2.30
—
t_rr
Reverse recovery time
(Note 2) _{VCC = 850 V, IE = 2400 A}
—
—
1.50
µs
Q_rr
Reverse recovery charge
(Note 2) _{VGE = ±15 V, RG(on) = 0.7 Ω}
—
620
—
µC
E_{rec (10%)}
Reverse recovery energy ^{(Note 2),(Note 5)}
T_j = 125 °C, L_s = 100 nH
Inductive load
—
0.38
—
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C 2 of 7