CM2400HC-34N_11 Datasheet, PDF (6/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

CONFIDENTIAL
4^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE SWITCHING TIME
CHARACTERISTICS (TYPICAL)
10
td(off)
VCC = 850V, VGE = ±15V
R_G(on) = 0.7 Ω, R_G(off) = 1.6 Ω
Tj = 125°C, Inductive load
td(on)
1
tf
0.1
tr
0.01
100
1000
Collector Current [A]
10000
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V_CC = 850V, V_GE = ±15V
R_G(on) = 0.7 Ω
Tj = 125°C, Inductive load
10000
Irr
10
1000
trr
1
100
0
100
1000
Emitter Current [A]
10
10000
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
Rth(j-c)Q = 9.5 K/kW
Rth(j-c)R = 21.0 K/kW
1
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C 6 of 7