CM2400HC-34N_11 Datasheet, PDF (5/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

CONFIDENTIAL
4^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
10000
1000
Cies
100
Coes
10
VGE = 0V, Tj = 25°C
f = 100kHz
Cres
1
0.1
1
10
100
Collector-Emitter Voltage [V]
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCE = 850V, IC = 2400A
Tj = 25°C
15
10
5
0
-5
-10
-15
0
10
20
30
40
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
3
VCC = 850V, VGE = ±15V
RG(on) = 0.7 Ω, R_G(off) = 1.6 Ω
Eoff
Tj = 125°C, Inductive load
2.5
2
1.5
Eon
1
Erec
0.5
0
0 1000 2000 3000 4000 5000
Collector Current [A]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
5
VCC = 850V, IC = 2400A
VGE = ±15V, Tj = 125°C
Inductive load
4
Eon
3
Eoff
2
1
Erec
0
0
2
4
6
8
10
12
Gate Resistance [Ω]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVM-1035-C 5 of 7