CM2400HC-34N_11 Datasheet, PDF (4/7 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

CONFIDENTIAL
4^th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
5000
Tj = 125°C
4000
3000
V_GE = 20V
V_GE = 15V
V_GE = 12V
V_GE = 10V
2000
TRANSFER CHARACTERISTICS
(TYPICAL)
5000
VCE = 20V
4000
3000
2000
Tj = 125°C
Tj = 25°C
1000
V_GE = 8V
0
0
1
2
3
4
5
6
Collector - Emitter Voltage [V]
1000
0
0
5
10
15
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
5000
VGE = 15V
4000
3000
Tj = 25°C
Tj = 125°C
2000
1000
0
0
1
2
3
4
Collector-Emitter Saturation Voltage [V]
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
5000
4000
3000
Tj = 125°C
Tj = 25°C
2000
1000
0
0
1
2
3
4
Emitter-Collector Voltage [V]
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
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