PMFPB8040XP_15 Datasheet, PDF (9/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

NXP Semiconductors
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
0.25
R_DSon
(Ω)
0.20
0.15
0.10
0.05
-1.3 V
V_GS = -1.4 V
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-1.6 V
-1.8 V
-2.5 V
-4.5 V
0.4
R_DSon
(Ω)
0.3
0.2
0.1
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T_j = 25 °C
T_j = 150 °C
0
0
-1
-2
-3
-4
I_D (A)
T_j = 25 °C
0
0
-1
-2
-3
-4
V_GS (V)
I_D = -3 A
Fig. 10. MOSFET transistor: Drain-source on-state
Fig. 11. MOSFET transistor: Drain-source on-state
resistance as a function of drain current; typical
resistance as a function of gate-source voltage;
values
typical values
-10
I_D
(A)
-8
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2.0
a
1.5
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-6
1.0
-4
0.5
-2
T_j = 150 °C
T_j = 25 °C
0
0
-0.5
-1.0
-1.5
-2.0
-2.5
V_GS (V)
V_DS > I_D × R_DSon
Fig. 12. MOSFET transistor: Transfer characteristics:
drain current as a function of gate-source
voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 13. MOSFET transistor: Normalized drain-source
on-state resistance as a function of junction
temperature; typical values
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
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