PMFPB8040XP_15 Datasheet, PDF (5/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

NXP Semiconductors
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
MOSFET transistor
R_th(j-a)
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
R_th(j-sp)
thermal resistance
from junction to solder
point
Schottky diode
R_th(j-a)
thermal resistance
from junction to
ambient
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1]
-
[2]
-
[2]
-
-
225 260 K/W
99
115 K/W
54
62
K/W
16
20
K/W
[1]
-
-
260 K/W
[2]
-
-
105 K/W
-
-
20
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm}²_.
10³
Z_th(j-a)
(K/W)
10²
duty cycle = 1
0.75
0.5
0.33 _0.25
0.2
0.1
10 ^0.05
0.02
0.01
1
0
017aaa564
10^-1
10^-5
10^-4
10^-3
10^-2
10^-1
1
FR4 PCB, standard footprint
10
10²
10³
t_p (s)
Fig. 4. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMFPB8040XP
Product data sheet
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21 December 2012
© NXP B.V. 2012. All rights reserved
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