PMFPB8040XP_15 Datasheet, PDF (4/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

NXP Semiconductors
120
P_der
(%)
80
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
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120
I_der
(%)
80
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40
40
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 1.
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
0
- 75
- 25
25
75
125
175
T_j (°C)
Fig. 2.
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
-10²
I_D
(A)
-10
-1
-10^-1
Limit R_DSon = V_DS/I_D
DC; T_sp = 25 °C
DC; T_amb = 25 °C;
drain mounting pad 6 cm²
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t_p = 10 µs
t_p = 100 µs
t_p = 10 ms
t_p = 100 ms
-10^-2
-10^-1
-1
I_DM = single pulse
-10
-10²
V_DS (V)
Fig. 3. MOSFET transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
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