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PMFPB8040XP_15 Datasheet, PDF (3/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
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NXP Semiconductors
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
Symbol
Parameter
Conditions
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
VGS = -4.5 V; Tamb = 25 °C
[1]
VGS = -4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
Schottky diode
VR
reverse voltage
Tamb = 25 °C
IF
forward current
Tsp ≤ 105 °C
IFRM
repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 ; Tamb = 25 °C
IFSM
non-repetitive peak forward
tp = 8 ms; Tj(init) = 25 °C; square wave
current
tp = 8 ms; Tj(init) = 25 °C; half-sine wave [3]
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
Per device
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Min Max Unit
-12 12
V
-
-3.7 A
-
-2.7 A
-
-1.7 A
-
-11 A
-
485 mW
-
1100 mW
-
6250 mW
-
-1.1 A
-
30
V
-
2
A
-
7
A
-
18
A
-
25
A
-
480 mW
-
1190 mW
-
6250 mW
-55 150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Calculated from square-wave measurements.
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
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