 English |
|
|
|
|
|
|
|
| PMFPB8040XP_15 Datasheet, PDF (7/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination | |||
| |||
| ◁ |
NXP Semiconductors
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1 0.05
10
0
0.02
0.01
017aaa089
1
10- 3
10- 2
10- 1
1
FR4 PCB, mounting pad for cathode 6 cm2
10
102
103
tp (s)
Fig. 7. Schottky diode: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
MOSFET transistor static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.7 A; Tj = 150 °C
VGS = -2.5 V; ID = -2.5 A; Tj = 25 °C
VGS = -1.8 V; ID = -1.1 A; Tj = 25 °C
gfs
transfer conductance VDS = -10 V; ID = -2.7 A; Tj = 25 °C
MOSFET transistor dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -10 V; ID = -2.7 A; VGS = -4.5 V;
Tj = 25 °C
QGD
gate-drain charge
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
Min Typ Max Unit
-20 -
-
V
-0.4 -0.6 -1
V
-
-
-1
µA
-
-
-10 µA
-
-
-100 nA
-
-
100 nA
-
80
102 mΩ
-
116 148 mΩ
-
95
125 mΩ
-
120 156 mΩ
-
15
-
S
-
5.7 8.6 nC
-
0.7 -
nC
-
0.96 -
nC
© NXP B.V. 2012. All rights reserved
7 / 16
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese