PMFPB8040XP_15 Datasheet, PDF (8/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

NXP Semiconductors
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
Symbol
Parameter
Conditions
C_iss
input capacitance
V_DS = -10 V; f = 1 MHz; V_GS = 0 V;
C_oss
output capacitance
T_j = 25 °C
C_rss
reverse transfer
capacitance
t_d(on)
t_r
turn-on delay time
rise time
V_DS = -10 V; I_D = -2.4 A; V_GS = -4.5 V;
R_G(ext) = 6 Ω; T_j = 25 °C
t_d(off)
turn-off delay time
t_f
fall time
MOSFET transistor source-drain diode
V_SD
source-drain voltage I_S = -1.1 A; V_GS = 0 V; T_j = 25 °C
Schottky diode
V_F
forward voltage
I_F = 100 mA; T_j = 25 °C
I_F = 500 mA; T_j = 25 °C
I_F = 1 A; T_j = 25 °C
I_R
reverse current
V_R = 5 V; T_j = 25 °C
V_R = 5 V; T_j = 125 °C
V_R = 10 V; T_j = 25 °C
V_R = 20 V; T_j = 25 °C
V_R = 30 V; T_j = 25 °C
C_d
diode capacitance
V_R = 5 V; f = 1 MHz; T_j = 25 °C
Min Typ Max Unit
-
550 -
pF
-
63
-
pF
-
53
-
pF
-
6
-
ns
-
14
-
ns
-
120 -
ns
-
50
-
ns
-
-0.8 -1.2 V
-
330 390 mV
-
400 460 mV
-
440 520 mV
-
1
3.5 µA
-
0.33 1.2 mA
-
2
5
µA
-
4
15
µA
-
8
30
µA
-
45
55
pF
-10
I_D
(A)
-8
-10 V
-4.5 V
-2.5 V
-6
-4
017aaa531
-2 V
V_GS = -1.8 V
-1.6 V
-1.5 V
-1.4 V
-2
-1.2 V
0
0
-1
T_j = 25 °C
-1 V
-2
-3
-4
V_DS (V)
Fig. 8.
MOSFET transistor: Output characteristics:
drain current as a function of drain-source
voltage; typical values
-10^-3
I_D
(A)
-10^-4
017aaa532
min
typ
max
-10^-5
0
-0.25
-0.50
T_j = 25 °C; V_DS = -5 V
-0.75
-1.00
V_GS (V)
Fig. 9. MOSFET transistor: Subthreshold drain current
as a function of gate-source voltage
PMFPB8040XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
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