PMFPB8040XP_15 Datasheet, PDF (10/16 Pages) NXP Semiconductors – 20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination

NXP Semiconductors
PMFPB8040XP
20 V, 3.7 A / 440 mV VF P-channel MOSFET-Schottky combination
-2.0
V_GS(th)
(V)
-1.5
max
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10³
C
(pF)
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C_iss
-1.0
typ
min
-0.5
10²
C_oss
C_rss
0
-60
0
60
I_D = -0.25 mA; V_DS = V_GS
120
180
T_j (°C)
Fig. 14. MOSFET transistor: Gate-source threshold
voltage as a function of junction temperature
-12
V_GS
(V)
-8
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-4
0
0
3
6
9
12
Q_G (nC)
I_D = -3 A; V_DS = -10 V; T_amb = 25 °C
Fig. 16. MOSFET transistor: Gate-source voltage as a
function of gate charge; typical values
10
-10^-1
-1
f = 1 MHz; V_GS = 0 V
-10
-10²
V_DS (V)
Fig. 15. MOSFET transistor: Input, output and reverse
transfer capacitances as a function of drain-
source voltage; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 17. MOSFET transistor: Gate charge waveform
definitions
PMFPB8040XP
Product data sheet
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21 December 2012
© NXP B.V. 2012. All rights reserved
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